AO4407A Alpha & Omega Semiconductor Inc, AO4407A Datasheet - Page 3

• Manufacturer Part Number: AO4407A
• Description: MOSFET P-CH -30V -12A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4407A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 12A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1022-2

AO4407A
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
80
60
40
20
5
0
30
25
20
15
10
0
5
0
0
3
Figure 5: On-Resistance vs. Gate-Source Voltage
-10V
Figure 3: On-Resistance vs. Drain Current and
Figure 1: On-Region Characteristics
4
4
1
5
-6V
Gate Voltage
8
2
-V
V
-V
V
V
GS
DS
GS
6
-I
GS
GS
D
=-20V
=-10V
(Volts)
=-6V
(A)
(Volts)
I
12
7
F
-5V
3
=-6.5A, dI/dt=100A/ s
V
GS
= -3.5V
8
-4.5V
-4V
16
4
I
D
25° C
=-12A
125° C
9
20
10
5
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0
0
0
0.0
V
DS
0.5
= -5V
25
Figure 4: On-Resistance vs. Junction
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
1
0.2
125° C
1.5
50
0.4
Temperature (° C)
2
-V
Temperature
-V
GS
75
125° C
2.5
SD
(Volts)
0.6
25° C
(Volts)
V
I
D
100
GS
=-12A
3
V
I
www.aosmd.com
D
=-20V
GS
=-10A
3.5
=-6V
0.8
125
4
V
I
25° C
D
1.0
GS
=-12A
150
4.5
=-10V
5
1.2
175