AO4407A Alpha & Omega Semiconductor Inc, AO4407A Datasheet - Page 4

• Manufacturer Part Number: AO4407A
• Description: MOSFET P-CH -30V -12A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4407A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 12A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1022-2

AO4407A
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.01
10
0.001
100
0.1
8
6
4
2
0
0.01
10
0.1
1
10
0.00001
0
0.1
1
R
T
T
DS(ON)
Figure 9: Maximum Forward Biased Safe
J(Max)
A
=25° C
Figure 7: Gate-Charge Characteristics
5
=150° C
limited
D=T
T
R
J,PK
Operating Area (Note E)
JA
0.0001
V
I
D
on
=75° C/W
DS
=-12A
=T
10
/T
=-15V
1
A
+P
-V
DM
Q
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
DS
.Z
g
15
(nC)
(Volts)
JA
Single Pulse
.R
0.001
JA
20
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
25
0.01
10 s
DC
100 s
1ms
10ms
100ms
10s
100
Pulse Width (s)
30
0.1
3000
2500
2000
1500
1000
1000
500
100
10
0.00001
0
1
0
Figure 10: Single Pulse Power Rating Junction-
1
Figure 8: Capacitance Characteristics
C
C
rss
5
oss
P
0.001
D
T
to-Ambient (Note E)
10
on
10
Pulse Width (s)
T
-V
DS
15
0.1
(Volts)
www.aosmd.com
100
C
20
iss
T
T
J(Max)
A
=25° C
10
=150° C
25
1000
1000
30