BSP250,115 NXP Semiconductors, BSP250,115 Datasheet - Page 5

• Manufacturer Part Number: BSP250,115
• Description: MOSFET P-CH 30V 3A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP250,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.65W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 3A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Gate Charge Qg: 10 nC
• Forward Transconductance Gfs (max / Min): 2 S, 1 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1650 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934033450115::BSP250 T/R::BSP250 T/R

Philips Semiconductors
1997 Jun 20
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
V
T
Fig.4
V
T
j
j
GS
DS
= 25 C.
= 25 C.
(pF)
600
C
400
200
(A)
I D
= 10 V.
= 0.
Fig.6 Transfer characteristic, typical values.
16
12
0
8
4
0
0
0
Capacitance as a function of drain source
voltage; typical values.
2
10
4
20
C oss
C rss
C iss
6
V DS (V)
V GS (V)
MBE144
MBE150
30
8
5
handbook, halfpage
handbook, halfpage
T
V
I
Fig.7
D
j
DD
V GS
= 25 C.
= 3 A.
(V)
(A)
I D
= 15 V.
Fig.5 Output characteristics; typical values.
12
10
10
8
6
4
2
0
8
6
4
2
0
0
0
Gate-source voltage as a function of total
gate charge.
V GS =
10 V
2
2
4
7.5 V
4
6
6
8
Product specification
4.5 V
3.5 V
2.5 V
6 V
5 V
4 V
3 V
V
8
DS
10
Q g (nC)
BSP250
MBE149
(V)
MBE145
10
12