BSP250,115 NXP Semiconductors, BSP250,115 Datasheet - Page 9
![MOSFET P-CH 30V 3A SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP250,115
Manufacturer Part Number
BSP250,115
Description
MOSFET P-CH 30V 3A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP250135.pdf
(12 pages)
Specifications of BSP250,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1.65W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
25nC @ 10V
Vgs(th) (max) @ Id
2.8V @ 1mA
Current - Continuous Drain (id) @ 25° C
3A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1A, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Gate Charge Qg
10 nC
Forward Transconductance Gfs (max / Min)
2 S, 1 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
1650 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934033450115::BSP250 T/R::BSP250 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP250,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 20
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
P-channel enhancement mode
vertical D-MOS transistor
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
9
Product specification
BSP250