AO4456 Alpha & Omega Semiconductor Inc, AO4456 Datasheet - Page 2

• Manufacturer Part Number: AO4456
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SRFET™r

Specifications of AO4456

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Input Capacitance (ciss) @ Vds: 7716pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1035-2

Rev9: March 2011
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150° C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25° C.
D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board
with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150° C. The SOA curve provides a s ingle pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
Parameter
J
=25° C unless otherwise noted)
www.aosmd.com
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=1A,V
GEN
=20A, dI/dt=500A/ s
=20A, dI/dt=500A/ s
=250 A, V
=30V, V
=0V, V
=V
=5V, I
=10V, V
=10V, I
=4.5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=3
GS
GS
I
D
D
=0V
GS
=20A
DS
DS
D
=250 A
GS
D
DS
DS
DS
=20A
GS
= ±12V
=18A
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
L
=20A
T
T
=0.75 ,
J
J
=125° C
=125° C
Min
120
1.2
0.2
30
60
30
4320
Typ
5.9
112
570
310
1.8
3.8
4.5
0.5
0.5
9.8
9.5
77
44
16
11
10
46
12
20
5185
Max
7.4
100
493
20
0.1
2.4
4.6
5.6
0.7
0.9
95
42
15
5
Page 2 of 7
AO4456
Units
m
m
mA
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
S
V
A