AO4456 Alpha & Omega Semiconductor Inc, AO4456 Datasheet - Page 6

• Manufacturer Part Number: AO4456
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SRFET™r

Specifications of AO4456

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Input Capacitance (ciss) @ Vds: 7716pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1035-2

Rev9: March 2011
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
40
30
20
10
35
30
25
20
15
10
Figure 15: Diode Reverse Recovery Charge and Peak
0
5
0
0
0
Figure 17: Diode Reverse Recovery Charge and
0
Figure 13: Diode Reverse Leakage Current vs.
di/dt=800A/ s
Q
I
rm
I
rr
s
Q
I
=20A
rm
rr
5
Current vs. Conduction Current
200
V
DS
=24V
50
Peak Current vs. di/dt
Junction Temperature
10
Temperature (° C)
400
di/dt (A/ s)
I
S
15
125ºC
100
(A)
125ºC
125ºC
125ºC
600
V
25ºC
DS
25ºC
25ºC
20
=12V
150
800
25ºC
25
www.aosmd.com
1000
30
200
12
10
8
6
4
2
0
10
8
6
4
2
0
20
15
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
16
14
12
10
5
0
8
6
4
2
0
0
0
0
Figure 16: Diode Reverse Recovery Time and
Figure 18: Diode Reverse Recovery Time and
Figure 14: Diode Forward voltage vs. Junction
di/dt=800A/ s
t
Softness Factor vs. Conduction Current
rr
S
5
200
50
Softness Factor vs. di/dt
10
125º
Temperature (° C)
125ºC
25ºC
400
Temperature
di/dt (A/ s)
125ºC
I
I
S
S
15
=1A
100
20A
(A)
5A
25ºC
600
25ºC
125ºC
20
25ºC
150
800
10A
I
25
s
=20A
t
S
rr
1000
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AO4456
30
200
2.5
2
1.5
1
0.5
0
3
2.5
2
1.5
1
0.5
0