BS170G ON Semiconductor, BS170G Datasheet - Page 2
![MOSFET N-CH 60V 500MA TO-92](/photos/5/32/53267/to-92-3_standardbody__to-226_bentlead_sml.jpg)
BS170G
Manufacturer Part Number
BS170G
Description
MOSFET N-CH 60V 500MA TO-92
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of BS170G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 10V
Power - Max
350mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.2 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
0.5 A
Package Type
TO-92 (TO-226)
Polarization
N-Channel
Resistance, Drain To Source On
1.8 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Transconductance, Forward
200 Millimhos
Voltage, Breakdown, Drain To Source
90 V
Voltage, Gate To Source
±20 VDC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BS170G
BS170GOS
BS170GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BS170G
Manufacturer:
ON Semiconductor
Quantity:
4 450
Part Number:
BS170G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
BS170G.
Manufacturer:
ON/安森美
Quantity:
20 000
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
BS170
BS170G
BS170RLRA
BS170RLRAG
BS170RLRM
BS170RLRMG
BS170RLRP
BS170RLRPG
BS170RL1
BS170RL1G
BS170ZL1
BS170ZL1G
Specifications Brochure, BRD8011/D.
Gate Reverse Current
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Static Drain−Source On Resistance
Drain Cutoff Current
Forward Transconductance
Input Capacitance
Turn−On Time
Turn−Off Time
(V
(V
(V
(V
(V
(V
(V
(I
(I
D
D
GS
GS
DS
GS
DS
DS
DS
= 0.2 Adc) See Figure 1
= 0.2 Adc) See Figure 1
= 15 Vdc, V
= 0, I
= V
= 10 Vdc, I
= 25 Vdc, V
= 10 Vdc, I
= 10 Vdc, V
GS
D
, I
= 100 mAdc)
D
= 1.0 mAdc)
D
D
Device
GS
GS
DS
= 200 mAdc)
= 250 mAdc)
= 0)
= 0 Vdc)
= 0, f = 1.0 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
BS170
2
V
Symbol
V
r
(BR)DSS
I
DS(on)
I
GS(Th)
D(off)
C
GSS
g
t
t
on
off
iss
fs
Min
0.8
60
−
−
−
−
−
−
−
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Reel
1000 Unit/Tube
1000 Unit/Tube
Shipping
0.01
Typ
200
2.0
1.8
4.0
4.0
90
−
−
†
Max
3.0
5.0
0.5
10
60
10
10
−
−
mmhos
nAdc
Unit
Vdc
Vdc
mA
pF
ns
ns
W