BS170G ON Semiconductor, BS170G Datasheet - Page 3

• Manufacturer Part Number: BS170G
• Description: MOSFET N-CH 60V 500MA TO-92
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of BS170G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.5 A
• Package Type: TO-92 (TO-226)
• Polarization: N-Channel
• Resistance, Drain To Source On: 1.8 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Transconductance, Forward: 200 Millimhos
• Voltage, Breakdown, Drain To Source: 90 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BS170G; BS170GOS

PULSE GENERATOR
2.0
1.6
1.2
0.8
0.4
0.8
2.0
1.6
1.2
0.4
0
50 W
50
0
Figure 3. V
Figure 1. Switching Test Circuit
V
Figure 5. Output Characteristics
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS(th)
10
V
T
0
in
J
50 W
, JUNCTION TEMPERATURE (°C)
Normalized versus Temperature
40 pF
20
50
1.0 MW
V
I
+25 V
D
DS
= 1.0 mA
125 W
100
30
= V
(V
GS
50 W ATTENUATOR
in
V
RESISTIVE SWITCHING
GS
Amplitude 10 Volts)
= 10 V
http://onsemi.com
9.0 V
8.0 V
7.0 V
5.0 V
6.0 V
4.0 V
20 dB
40
150
BS170
3
100
TO SAMPLING SCOPE
50 W INPUT
80
60
40
20
2.0
1.6
1.2
0.8
0.4
0
0
V
out
10
Figure 4. On−Region Characteristics
V
OUTPUT
INVERTED
V
DS
INPUT
Figure 6. Capacitance versus
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Drain−To−Source Voltage
Figure 2. Switching Waveforms
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0
20
V
GS
V
V
in
= 0 V
out
10%
30
2.0
t
on
40
90%
PULSE
WIDTH
50
3.0
V
60
GS
C
t
90%
C
C
off
oss
= 10 V
iss
rss
50%
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
10%
4.0