ZVN3320ASTOA Diodes Zetex, ZVN3320ASTOA Datasheet - Page 45

• Manufacturer Part Number: ZVN3320ASTOA
• Description: MOSFET N-CHAN 200V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN3320ASTOA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZVN3320ASTOA; ZVN3320ASTOATR

†
*Indicative relative size
N-channel from 60 to 70V
Avalanche rated product *Advance information
ZXMN6A09K
ZXMN6A25K
ZXMN6A09G
ZXMN6A09DN8
ZXMN6A25N8*
ZXMN6A25G
ZXMN6A25DN8
ZXMN6A08G
ZXMN6A11G
ZXMN6A11Z
ZXMN6A08E6
ZXMN6A11DN8
ZXMN6A07Z
ZVN4306G
ZVN4306GV*
ZXMN6A07F
ZVN4306A
ZVN4306AV
ZVN4206G
ZVN4206GV
ZVN2106G
ZVN4206A
ZVN4206AV
ZVN2106A
VN10LP
ZVN3306A
ZVN4106F
ZVN3306F
2N7002
ZXMN7A11K
ZXMN7A11G
G
Part number
*
S
S
S
*
G
DPAK
MSOP8
D
D
(M1)
S
S2,S3
†
†
(M1)
†
G3
G2
G1
D
D
D
D
S1
G1
S2
G2
SM8
MSOP8
Polarity
2 x N
2 x N
2 x N
(M1)
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
N
G4
D3,D4
S1,S4
D1,D2
(M2)
BV
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
70
70
D1
D1
D2
D2
V
DSS
D
G1
G2
S1
S2
0.115 0.33
SOT223
11.2
0.71
0.45
0.27 0.625
0.27 0.625
0.15
5.1
5.1
5.7
4.8
4.7
3.8
3.8
3.2
3.1
2.7
2.2
2.1
2.1
1.2
1.1
1.1
0.6
0.6
0.2
6.1
3.8
I
A
7
1
1
MSOP8
D
N
P
10.1
0.33
0.33
4.2
3.8
2.1
2.5
2.1
3.9
3.9
1.5
1.7
2.1
1.5
0.8
1.1
1.1
0.7
0.7
0.7
8.5
3.9
P
(M1)
W
2
3
3
2
2
2
D
(M3)
G
S
D
D1
D1
D2
D2
V
S
S
S
G
GS
0.06
0.07
0.06
0.06
0.07
0.07
0.07
0.15
0.18
0.18
0.15
0.18
0.35
0.35
0.19
0.19
D
D
G
Ω
=4.5V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23-6
SO8
R
(M1)
45
DS(on)
V
GS
(M1)
20.4
0.45
0.45
0.45
0.45
1.5
1.5
1.5
1.5
7.5
Ω
5
D
D
D
D
max. @
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 5V
D
D
S
D
G2
G1
S2
S1
SOT23
V
SO8
GS
0.04
0.05
0.04
0.04
0.05
0.05
0.05
0.08
0.12
0.12
0.08
0.12
0.25
0.33
0.33
0.25
0.33
0.33
3.75
0.13
0.13
2.5
Ω
= 10V
1
1
2
1
1
2
5
5
5
(M1)
(M2)
G
S
D2
D1
D1
D2
D2
C
V
G2 S2 G1 S1
D2 D2 D1 D1
DFN832
5
PMOS
4
Bottom view
iss
DS
1426
1063
1410
1410
1063
1063
1063
470
330
330
459
330
166
220
220
166
220
220
300
300
70
70
50
70
70
50
30
30
27
30
27
pF
G2
typ.@
= 30V
G1
S2
6
3
S1
7
2
NMOS
(M2)
SO8
8
1
N
D1
P
V
(M3)
Q
GS
g
20.4
20.4
20.4
20.4
0.95
0.95
0.95
nC
5.8
5.7
5.7
5.8
5.7
3.2
5.2
5.2
3.2
5.2
5.2
2.4
2.4
1.6
2.4
2.4
1.6
7.4
7.4
typ.@
29
24
24
E-line
= 10V
1
1
Rounded
D
D1
D1
D2
D2
face
G S
(M1)
D
Package
DPAK
DPAK
SOT223
SO8
SO8
SOT223
SO8
SOT223
SOT223
SOT89
SOT23-6
SO8
SOT89
SOT223
SOT223
SOT23
E-Line
E-Line
SOT223
SOT223
SOT223
E-Line
E-Line
E-Line
E-Line
E-Line
SOT23
SOT23
SOT23
DPAK
SOT223
SOT89
TO220
(M2)
(M1)
(M2)
(M2)
G
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
D
D
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
(M1)
S
D
G
S
3.0