ZVN3320ASTOA Diodes Zetex, ZVN3320ASTOA Datasheet - Page 85

• Manufacturer Part Number: ZVN3320ASTOA
• Description: MOSFET N-CHAN 200V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN3320ASTOA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZVN3320ASTOA; ZVN3320ASTOATR

SOD523
360mW devices
Mounted on 25mm x 25mm x 1.6mm FR4 pcb with high coverage of 1oz weight copper, in still air conditions.
SO8 dual
Single die on 1.25W devices
Derating curves
Mounted on 25mm x 25mm x 1.6mm FR4 pcb with full coverage of single sided 1oz weight copper, in still air conditions.
j-a=350°C/W.
j-a=100°C/W maximum.
350
300
250
200
150
100
110
100
50
90
80
70
60
50
40
30
20
10
2.0
1.5
1.0
0.5
0.0
100µ
0
0
100µ
0
T
D=0.5
D=0.2
D=0.5
D=0.2
amb
1m
One active die
1m
T
amb
25
=25°C
- Ambient Temperature (˚C)
10m 100m
10m
Pulse Width (s)
Pulse Width (s)
50
100m
D=0.1
75
Two active die
D=0.05
1
D=0.1
1
100
Single Pulse
D=0.05
10
One active die
Single Pulse
10
125
100
100
1k
150
1k
85
Derating curve
Both die on equally, total power 1.75W
j-a=69°C/W maximum.
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
70
60
50
40
30
20
10
0
100µ
0
T
amb
D=0.2
D=0.5
T
amb
20
1m
=25°C
- Ambient Temperature (°C)
40
10m
Pulse Width (s)
60
100m
80
D=0.1
1
100
D=0.05
120
10
Single Pulse
140
100
160
1k
9.0