SPD50P03L G Infineon Technologies, SPD50P03L G Datasheet - Page 2

• Manufacturer Part Number: SPD50P03L G
• Description: MOSFET P-CH 30V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50P03L G

• Package / Case: DPak, TO-252 (4 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 126nC @ 10V
• Input Capacitance (ciss) @ Vds: 6880pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 104 ns
• Rise Time: 21.7 ns
• Package: DPAK 5pin (TO-252 5pin)
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 7.0 mOhm
• Rds (on) (max) (@4.5v): 125.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000086729; SP000371908; SPD50P03L G; SPD50P03LGINTR; SPD50P03LGXT

Rev. 1.8
1)
2)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
Transconductance
Current is limited by bondwire; with an R
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
=1 K/W the chip is able to carry 123 A.
thJC
thJA
DS(on)
DS(on)
minimal footprint
6 cm
V
V
I
V
T
V
T
V
V
I
V
|V
I
D
D
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=-250 µA
=25 °C
=175 °C
=-30 A
=-50 A
DS
=V
=-30 V, V
=-30 V, V
=0 V, I
=-20 V, V
=-4.5 V,
=-10 V, I
|>2|I
2
cooling area
GS
,
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
=-250 µA
D
DS(on)max
GS
GS
DS
=-50 A
=0 V,
=0 V,
=0 V
2)
,
min.
-30
47
-1
-
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
-10
-10
8.5
5.7
94
-
-
-
-
SPD50P03L G
max.
-100
-100
12.5
7.0
75
50
-2
-1
1
-
-
Unit
K/W
V
µA
nA
mΩ
S
2008-07-10