SPD50P03L G Infineon Technologies, SPD50P03L G Datasheet - Page 7

• Manufacturer Part Number: SPD50P03L G
• Description: MOSFET P-CH 30V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD50P03L G

• Package / Case: DPak, TO-252 (4 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 126nC @ 10V
• Input Capacitance (ciss) @ Vds: 6880pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 104 ns
• Rise Time: 21.7 ns
• Package: DPAK 5pin (TO-252 5pin)
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 7.0 mOhm
• Rds (on) (max) (@4.5v): 125.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000086729; SP000371908; SPD50P03L G; SPD50P03LGINTR; SPD50P03LGXT

Rev. 1.8
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
36
35
34
33
32
31
30
29
28
27
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
20
10
t
T
60
AV
j
[°C]
[µs]
100
C °150
100
C °100
140
C °25
180
1000
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
20
=-50 A pulsed
g s
40
-Q
Q
gate
g
Q
60
sw
[nC]
Q
V 6-
g d
80
SPD50P03L G
V 15- V 24-
100
Q
g ate
2008-07-10
120