NTF2955T1G ON Semiconductor, NTF2955T1G Datasheet

NTF2955T1G

Manufacturer Part Number

NTF2955T1G

Description

MOSFET P-CH 60V 1.7A SOT-223

Manufacturer

ON Semiconductor

Datasheet

1.NTF2955T1G.pdf (5 pages)

Specifications of NTF2955T1G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

170 mOhm @ 750mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

1.7A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

14.3nC @ 10V

Input Capacitance (ciss) @ Vds

492pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.185 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

1.77 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.6 A

Power Dissipation

2300 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTF2955T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF2955T1G

Manufacturer:

ON Semiconductor

Quantity:

66 800

Company:

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Part Number:

NTF2955T1G

Manufacturer:

Quantity:

30 000

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Part Number:

NTF2955T1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

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Part Number:

NTF2955T1G

Company:

H&T Electronics

Part Number:

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Quantity:

4 500

Company:

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Part Number:

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6 000

Company:

H&T Electronics

Part Number:

NTF2955T1G

Quantity:

Current page: 1 of 5
Download datasheet (111Kb)

NTF2955, NTF2955P

Power MOSFET

−60 V, −2.6 A, Single P−Channel SOT−223

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127

2. When surface mounted to an FR4 board using the minimum recommended

MAXIMUM RATINGS

August, 2008 − Rev. 4

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Single Pulse Drain−to−Source Avalanche

Energy (V

L = 10 mH, R

Lead Temperature for Soldering Purposes

(1/8” from case for 10 seconds)

Junction−to−Tab (Drain) − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

TMOS7 Design for low R

Withstands High Energy in Avalanche and Commutation Modes

Pb−Free Packages are Available

Power Supplies

PWM Motor Control

Converters

Power Management

pad size (Cu. area = 0.341 in

[1 oz] including traces)

= 25 V, V

= 25 W)

Parameter

= 10 V, I

= 25°C unless otherwise noted)

Steady

State

DS(on)

)

tp = 10 ms

= 6.7 A,

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

EAS

DSS

STG

qJC

qJA

Value

−55 to

−2.6

−2.0

−1.7

−1.3

Max

−60

±20

−17

225

260

150

175

2.3

1.0

°C/W

Unit

°C

†For information on tape and reel specifications,

NTF2955T1

NTF2955T1G

NTF2955PT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

−60 V

(BR)DSS

CASE 318E

Device

(Note: Microdot may be in either location)

SOT−223

STYLE 3

1 2

ORDERING INFORMATION

http://onsemi.com

145 mW @ −10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package

MARKING DIAGRAMS AND

(Pb−Free)

SOT−223

Package

P−Channel

DS(on)

PIN ASSIGNMENT

Gate

Publication Order Number:

TYP

2955PG

1000/Tape & Reel

2955G

AYW

Drain

4 Drain

Shipping

NTF2955/D

−2.6 A

MAX

Source

†

Related parts for NTF2955T1G

NTF2955T1G Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NTF2955T1 SOT−223 1000/Tape & Reel NTF2955T1G SOT−223 1000/Tape & Reel (Pb−Free) NTF2955PT1G SOT−223 1000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance ...

Page 3

TYPICAL PERFORMANCE CURVES − − −V DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS, Figure 1. On−Region Characteristics 0 − 0.3 ...

Page 4

TYPICAL PERFORMANCE CURVES 1200 1000 iss 800 C rss 600 400 200 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. ...

Page 5

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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