NTF2955T1G ON Semiconductor, NTF2955T1G Datasheet - Page 4

• Manufacturer Part Number: NTF2955T1G
• Description: MOSFET P-CH 60V 1.7A SOT-223
• Manufacturer: ON Semiconductor

Specifications of NTF2955T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 750mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 14.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 492pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.185 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.77 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF2955T1GOSTR

1200
1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
10
1
0.1
1
C
C
V
SINGLE PULSE
T
V
I
V
Figure 9. Resistive Switching Time Variation
rss
C
iss
D
GS
Figure 11. Maximum Rated Forward Biased
DD
GS
V
−V
= 25°C
= −1.5 A
DS
= −20 V
5
= −10 V
DS
= −25 V
t
t
d(on)
d(off)
= 0 V
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
t
t
f
r
THERMAL LIMIT
PACKAGE LIMIT
GS
R
R
versus Gate Resistance
0
DS(on)
G
Safe Operating Area
−V
TYPICAL PERFORMANCE CURVES
V
, GATE RESISTANCE (W)
1
GS
DS
LIMIT
= 0 V
5
dc
10
10
10 ms
10
15
1 ms
T
100 ms
J
20
= 25°C
10 ms
http://onsemi.com
C
C
C
iss
oss
rss
100
25
100
4
12
10
8
6
4
2
0
0
(T
250
200
150
100
50
Drain−to−Source Voltage versus Total Charge
Q
J
5
4
3
2
1
0
0
25
GS
= 25°C unless otherwise noted)
0
Figure 10. Diode Forward Voltage versus Current
Figure 12. Maximum Avalanche Energy versus
2
V
T
−V
J
T
GS
J
= 25°C
0.25
Figure 8. Gate−to−Source and
SD
, STARTING JUNCTION TEMPERATURE (°C)
Q
= 0 V
50
4
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
g
Starting Junction Temperature
, TOTAL GATE CHARGE (nC)
Q
DS
GD
0.5
6
75
Q
T
0.75
8
100
10
1
125
12
1.25
I
T
D
V
J
= −1.5 A
I
GS
= 25°C
PK
14
= −6.7 A
150
1.5
16
60
50
40
30
20
10
0
1.75
175