NTF2955T1G ON Semiconductor, NTF2955T1G Datasheet - Page 2

• Manufacturer Part Number: NTF2955T1G
• Description: MOSFET P-CH 60V 1.7A SOT-223
• Manufacturer: ON Semiconductor

Specifications of NTF2955T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 750mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 14.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 492pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.185 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.77 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF2955T1GOSTR

3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
=25°C unless otherwise stated)
V
Symbol
V
(BR)DSS
V
Q
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
Q
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
FS
ISS
t
t
GS
GD
SD
RR
a
b
r
f
/T
http://onsemi.com
J
V
V
V
V
I
GS
DS
V
V
S
GS
V
V
GS
V
V
V
V
V
V
GS
GS
2
I
GS
GS
= 1.5 A
GS
GS
GS
GS
GS
D
DS
= −60 V
= 0 V, dI
= 0 V,
= 0 V,
= 1.5 A, R
Test Condition
= −10 V, I
= −15 V, I
= V
= 10 V, V
= −10 V, I
= −10 V, I
= 10 V, V
= 0 V, f = 1.0 MHz,
= 0 V, I
= 0 V, V
V
R
I
I
DS
D
S
DS
L
= 1.5 A
= 1.5 A
, I
= 25 W
S
= 25 V
/dt = 100 A/ms,
D
D
GS
D
D
= −250 mA
DS
DD
G
D
= −1.0 mA
D
T
T
= −0.75 A
= −0.75 A
T
= 9.1 W
T
= −1.5 A
= ±20 V
= −2.4 A
J
J
= 30 V,
= 25 V,
J
J
= 125°C
= 125°C
= 25°C
= 25°C
−2.0
Min
−60
−1.10
0.139
66.4
1.77
14.3
−0.9
Typ
145
150
154
492
165
1.2
2.3
5.2
7.6
50
65
38
36
20
16
11
−1.30
±100
Max
−1.0
−4.0
−50
170
180
185
mV/°C
Unit
mW
mA
nA
nC
nC
pF
ns
ns
V
V
S
V