STN1NK80Z STMicroelectronics, STN1NK80Z Datasheet - Page 2
![MOSFET N-CH 800V 250MA SOT223](/photos/5/48/54884/sot-223_sml.jpg)
STN1NK80Z
Manufacturer Part Number
STN1NK80Z
Description
MOSFET N-CH 800V 250MA SOT223
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STQ1NK80ZR-AP.pdf
(15 pages)
Specifications of STN1NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 Ohms
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.25 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
800V
On Resistance Rds(on)
13ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4669-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN1NK80Z
Manufacturer:
STMicroelectronics
Quantity:
37 488
Part Number:
STN1NK80Z
Manufacturer:
ST
Quantity:
20 000
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
Table 4: Thermal Data
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Rthj-amb(#) Thermal Resistance Junction-ambient Max
V
Rthj-case
Rthj-lead
Symbol
dv/dt (1)
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
T
T
AR
stg
DS
GS
AS
GSO
D
D
1 A, di/dt 200 A/µs, V
j
l
( )
Thermal Resistance Junction-case Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C= 100pF, R= 1.5K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Parameter
j
= 25 °C, I
DD
640
Parameter
Parameter
D
C
GS
= I
= 25°C
GS
j
= 20 k )
max)
AR
= 0)
Igs=± 1mA (Open
Drain)
, V
DD
Test Conditions
C
C
= 25°C
= 100°C
= 50 V)
TO-92
TO-92
0.025
0.19
120
260
Min.
0.3
40
--
30
3
Max Value
-55 to 150
SOT-223
SOT-223
Value
1000
± 30
0.25
0.16
0.02
800
800
2.5
4.5
50
50
Typ.
--
--
--
5
1
DPAK/IPAK
DPAK/IPAK
0.63
0.36
2.78
Max.
100
300
1.0
45
--
W /°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
A
V