STN1NK80Z STMicroelectronics, STN1NK80Z Datasheet - Page 3
![MOSFET N-CH 800V 250MA SOT223](/photos/5/48/54884/sot-223_sml.jpg)
STN1NK80Z
Manufacturer Part Number
STN1NK80Z
Description
MOSFET N-CH 800V 250MA SOT223
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STQ1NK80ZR-AP.pdf
(15 pages)
Specifications of STN1NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 Ohms
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.25 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
800V
On Resistance Rds(on)
13ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4669-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN1NK80Z
Manufacturer:
STMicroelectronics
Quantity:
37 488
Part Number:
STN1NK80Z
Manufacturer:
ST
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
I
I
I
C
SD
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
GSS
fs
RRM
RRM
DSS
I
Q
Q
2. Pulse width limited by safe operating area.
3. C
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
r
gs
gd
f
(1)
rr
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
= 0)
CASE
I
V
V
V
V
V
V
V
V
V
R
(see Figure 21)
V
V
(see Figure 24)
I
I
V
(see Figure 22)
I
V
(see Figure 22)
D
SD
SD
SD
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
DD
DD
G
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7 V
= 1.0 A, V
= 1.0 A, di/dt = 100 A/µs
= 1.0 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 25 V
= 0V, V
= 400 V, I
= 640V, I
= 10V
= 50 V, T
= 50 V, T
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
,
DS
I
f = 1 MHz, V
D
GS
D
GS
D
D
GS
j
j
D
= 0.5 A
= 50 µA
= 0.5 A
= 25°C
= 150°C
= 0V to 640V
= 1.0 A,
= 0
= 10 V
= 0.5 A
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
800
3
oss
when V
802.7
Typ.
Typ.
Typ.
3.75
160
365
802
388
0.8
6.7
9.5
7.7
1.4
4.5
4.4
4.6
13
26
30
22
55
8
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
1.0
1.6
50
16
1
5
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
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