STN1NK80Z STMicroelectronics, STN1NK80Z Datasheet - Page 7
![MOSFET N-CH 800V 250MA SOT223](/photos/5/48/54884/sot-223_sml.jpg)
STN1NK80Z
Manufacturer Part Number
STN1NK80Z
Description
MOSFET N-CH 800V 250MA SOT223
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STQ1NK80ZR-AP.pdf
(15 pages)
Specifications of STN1NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 Ohms
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.25 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
800V
On Resistance Rds(on)
13ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4669-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN1NK80Z
Manufacturer:
STMicroelectronics
Quantity:
37 488
Part Number:
STN1NK80Z
Manufacturer:
ST
Quantity:
20 000
Figure 20: Unclamped Inductive Load Test Cir-
cuit
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 23: Unclamped Inductive Wafeform
Figure 24: Gate Charge Test Circuit
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