SIA413DJ-T1-GE3 Vishay, SIA413DJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA413DJ-T1-GE3
• Description: MOSFET P-CH 12V 12A SC70-6
• Manufacturer: Vishay

Specifications of SIA413DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 8V
• Input Capacitance (ciss) @ Vds: 1800pF @ 10V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.029 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA413DJ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70447
S-80435-Rev. C, 03-Mar-08
0.08
0.07
0.06
0.05
0.04
0.03
0.02
On-Resistance vs. Drain Current and Gate Voltage
40
32
24
16
8
0
8
6
4
2
0
0.0
0
0
V
I
D
GS
= 10 A
0.5
= 1.8 V
8
8
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
1.0
V
- Total Gate Charge (nC)
I
DS
D
Gate Charge
- Drain Current (A)
16
16
= 6 V
1.5
24
24
V
GS
V
2.0
GS
= 2.5 V
V
DS
= 5 thru 2.5 V
V
GS
= 9.6 V
V
V
V
32
32
GS
GS
GS
= 4.5 V
2.5
= 1.5 V
= 2 V
= 1 V
New Product
3.0
40
40
3000
2500
2000
1500
1000
500
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0
0
- 50
0.0
0
I
D
C
On-Resistance vs. Junction Temperature
= 6.7 A
rss
- 25
C
0.3
iss
V
V
DS
T
3
Transfer Characteristics
0
GS
J
T
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
oss
= 125 °C
Capacitance
25
0.6
T
C
V
= 25 °C
GS
50
6
Vishay Siliconix
= 4.5 V, 2.5 V
0.9
V
75
GS
SiA413DJ
= 4.5 V, 2.5 V
www.vishay.com
100
9
T
1.2
C
= - 55 °C
125
150
1.5
12
3