SIA413DJ-T1-GE3 Vishay, SIA413DJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA413DJ-T1-GE3
• Description: MOSFET P-CH 12V 12A SC70-6
• Manufacturer: Vishay

Specifications of SIA413DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 8V
• Input Capacitance (ciss) @ Vds: 1800pF @ 10V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.029 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA413DJ-T1-GE3TR

SiA413DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
http://www.vishay.com/ppg?70447.
1
1
10
10
-4
-4
0.05
Duty Cycle = 0.5
0.2
0.02
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.02
Single Pulse
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
S-80435-Rev. C, 03-Mar-08
t
2
Document Number: 70447
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 65 C/W
1000
10
-1