NDB6020P Fairchild Semiconductor, NDB6020P Datasheet
NDB6020P
Manufacturer Part Number
NDB6020P
Description
MOSFET P-CH 20V 24A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDB6020P.pdf
(6 pages)
Specifications of NDB6020P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1590pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
24 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDB6020P
NDB6020PTR
NDB6020PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDB6020P
Manufacturer:
FSC
Quantity:
12 000
Part Number:
NDB6020P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
Symbol
V
V
I
P
T
© 1997 Fairchild Semiconductor Corporation
________________________________________________________________________________
D
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
J
DSS
GSS
D
,T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
- Continuous
- Pulsed
Derate above 25°C
C
= 25°C
T
C
= 25°C unless otherwise noted
NDP6020P
Features
-24 A, -20 V. R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D
hole and surface mount applications.
-65 to 175
R
R
DS(ON)
DS(ON)
DS(ON)
-20
-24
-70
0.4
±8
60
= 0.07
= 0.075
= 0.05
2
PAK) package for both through
G
NDB6020P
@ V
@ V
@ V
GS
GS
= -2.7 V.
GS
= -4.5 V.
= -2.5 V.
September 1997
S
D
DS(ON)
NDP6020P Rev.C1
.
Units
W/°C
W
°C
V
V
A
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NDB6020P Summary of contents
Page 1
... NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state ...
Page 2
Electrical Characteristics (T = 25°C unless otherwise noted) C Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON ...
Page 3
Electrical Characteristics (T = 25°C unless otherwise noted) C Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS I Maximum Continuous Drain-Source Diode Forward Current S Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage SD Reverse Recovery Time t ...
Page 4
Typical Electrical Characteristics - -5.0V GS -4.5 -4.0 -40 -3.5 -30 -20 - DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -12A D 1.6 V =-4. ...
Page 5
Typical Electrical Characteristics -250µ ...
Page 6
Typical Electrical Characteristics -10 - DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain . Current and Temperature 0.5 0.5 0.3 ...