NDB6020P Fairchild Semiconductor, NDB6020P Datasheet - Page 3

• Manufacturer Part Number: NDB6020P
• Description: MOSFET P-CH 20V 24A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6020P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1590pF @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.005 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 24 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDB6020P; NDB6020PTR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
t
I
THERMAL CHARACTERISTICS
R
R
S
SM
rr
rr
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
SD
JC
JA
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
dI
GS
GS
F
/dt = 100 A/µs
= 0 V, I
= 0 V, I
S
F
= -12 A
= -24 A,
(Note 1)
Min
Typ
-1.1
-1.7
60
Max
62.5
-1.3
-24
-80
2.5
NDP6020P Rev.C1
Units
°C/W
°C/W
ns
A
A
V
A