NDB6020P Fairchild Semiconductor, NDB6020P Datasheet - Page 6

• Manufacturer Part Number: NDB6020P
• Description: MOSFET P-CH 20V 24A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6020P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Input Capacitance (ciss) @ Vds: 1590pF @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.005 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 24 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDB6020P; NDB6020PTR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
30
24
18
12
6
0
0.05
0.03
0.02
0.01
0
0.5
0.3
0.2
0.1
V
1
0.01
DS
Current and Temperature
0 . 0 1
= - 5V
0 . 0 5
0 . 0 2
0.1
Single Pulse
-5
0.2
D = 0.5
I , DRAIN CURRENT (A)
D
-10
0.1
Figure 15. Transient Thermal Response Curve.
-15
.
T = -55°C
J
125°C
25°C
(continued)
-20
1
-25
t ,TIME (m s)
1
100
60
30
10
5
3
2
1
1
R
Figure 14. Maximum Safe Operating Area
1 0
SINGLE PULSE
A
V
JC
T
GS
C
= 2.5 °C/W
2
= -4.5V
= 25°C
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
P(pk)
5
T - T
R
Duty Cycle, D = t
J
1 0 0
R
JC
t
1
C
JC
(t) = r(t) * R
t
= P * R
2
= 2.5 °C/W
10
JC
1
/t
JC
(t)
2
NDP6020P Rev.C1
20
1 0 0 0
.
30