IPB120N04S3-02 Infineon Technologies, IPB120N04S3-02 Datasheet - Page 4
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IPB120N04S3-02
Manufacturer Part Number
IPB120N04S3-02
Description
MOSFET N-CH 40V 120A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB120N04S3-02.pdf
(9 pages)
Specifications of IPB120N04S3-02
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 230µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
14300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB120N04S3-02
IPB120N04S3-02TR
SP000261216
IPB120N04S3-02TR
SP000261216
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
350
300
250
200
150
100
100
50
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0; SMD
≥ 6 V
50
1
T
V
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
140
120
100
10
10
10
= f(t
10
10
80
60
40
20
0
-1
-2
-3
1
0
C
10
); V
0
p
-6
0.5
0.1
0.05
0.01
)
single pulse
GS
IPI120N04S3-02, IPP120N04S3-02
10
≥ 6 V
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB120N04S3-02
10
-2
150
10
2007-04-30
-1
200
10
0