IPB120N04S3-02 Infineon Technologies, IPB120N04S3-02 Datasheet - Page 9
![MOSFET N-CH 40V 120A TO263-3](/photos/29/5/290584/to263_sml.jpg)
IPB120N04S3-02
Manufacturer Part Number
IPB120N04S3-02
Description
MOSFET N-CH 40V 120A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB120N04S3-02.pdf
(9 pages)
Specifications of IPB120N04S3-02
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 230µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
14300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB120N04S3-02
IPB120N04S3-02TR
SP000261216
IPB120N04S3-02TR
SP000261216
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2007-04-30