IPB70N10S3-12 Infineon Technologies, IPB70N10S3-12 Datasheet
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IPB70N10S3-12
Specifications of IPB70N10S3-12
IPB70N10S3-12INTR
SP000261246
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IPB70N10S3-12 Summary of contents
Page 1
... Product Summary PG-TO263-3-2 Marking 3N1012 3N1012 3N1012 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =35A =25 °C tot stg page 1 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value = 280 410 70 ±20 125 -55 ... +175 55/175/56 100 V 11 Unit °C 2008-02-12 ...
Page 2
... (BR)DSS =83µA GS(th = DSS T =25 ° = =125 ° =20V, V =0V GSS =10V, I =70A DS(on =10V, I =70A SMD version page 2 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Values min. typ. max 1 100 - 2.0 3 100 - - 100 - 9.7 11.6 - 9.4 11.3 Unit K µ 2008-02-12 ...
Page 3
... DS C oss f =1MHz C rss t d( d(off = = plateau =25° S,pulse = =25 ° =50V /dt =100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Values min. typ. max. - 3350 4355 - 940 1222 - 105 - = 5 0 100 - 265 Unit pF 158 - 280 1 2008-02-12 ...
Page 4
... V DS Rev. 1.0 2 Drain current 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-02-12 ...
Page 5
... V GS Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 21 -55 ° ° 175 ° -60 [V] page 5 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3- °C; SMD 5 [ SMD - 100 T [° 100 120 140 180 2008-02-12 ...
Page 6
... Typ. capacitances 400 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 25 °C 1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-02-12 ...
Page 7
... A 200 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3- -55 - 105 T [° 145 Q gate 2008-02-12 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI70N10S3-12, IPP70N10S3-12 page 8 IPB70N10S3-12 2008-02-12 ...
Page 9
... Revision History Version Rev. 1.0 Date page 9 IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Changes 2008-02-12 ...