IPB70N10S3-12 Infineon Technologies, IPB70N10S3-12 Datasheet - Page 6
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IPB70N10S3-12
Manufacturer Part Number
IPB70N10S3-12
Description
MOSFET N-CH 100V 70A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP70N10S3-12.pdf
(9 pages)
Specifications of IPB70N10S3-12
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.3 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
4355pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0113 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB70N10S3-12
IPB70N10S3-12INTR
SP000261246
IPB70N10S3-12INTR
SP000261246
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB70N10S3-12
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPB70N10S3-12
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
1
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
DS
175 °C
175 °C
80 µA
0.6
0.6
V
V
T
SD
SD
j
60
[°C]
[V]
[V]
25 °C
25 °C
0.8
0.8
400 µA
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
A S
= f(t
100
10
10
10
10
10
1
4
3
2
1
0.1
AV
DS
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
IPI70N10S3-12, IPP70N10S3-12
1
10
t
V
AV
DS
10
15
[µs]
[V]
150 °C
IPB70N10S3-12
20
100 °C
100
25 °C
25
2008-02-12
Coss
Ciss
Crss
1000
30