IPB70N10S3-12 Infineon Technologies, IPB70N10S3-12 Datasheet - Page 6

• Manufacturer Part Number: IPB70N10S3-12
• Description: MOSFET N-CH 100V 70A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB70N10S3-12

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.3 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 4355pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0113 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB70N10S3-12; IPB70N10S3-12INTR; SP000261246

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
1
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
DS
175 °C
175 °C
80 µA
0.6
0.6
V
V
T
SD
SD
j
60
[°C]
[V]
[V]
25 °C
25 °C
0.8
0.8
400 µA
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
A S
= f(t
100
10
10
10
10
10
1
4
3
2
1
0.1
AV
DS
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
IPI70N10S3-12, IPP70N10S3-12
1
10
t
V
AV
DS
10
15
[µs]
[V]
150 °C
IPB70N10S3-12
20
100 °C
100
25 °C
25
2008-02-12
Coss
Ciss
Crss
1000
30