IPB04N03LA Infineon Technologies, IPB04N03LA Datasheet - Page 2
![MOSFET N-CH 25V 80A D2PAK](/photos/5/53/55328/ipb04n03la_sml.jpg)
IPB04N03LA
Manufacturer Part Number
IPB04N03LA
Description
MOSFET N-CH 25V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB04N03LA.pdf
(9 pages)
Specifications of IPB04N03LA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.9 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 60µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
3877pF @ 15V
Power - Max
107W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IPB04N03LAINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB04N03LA
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IPB04N03LA G
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.7
2)
R
3)
4)
V
5)
epoxy PCB FR4 with 6 cm
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
GS
Current is limited by bondwire; with an
thJC
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm
j,max
<-5 V
=1.4 K/W the chip is able to carry 125
=150 °C and duty cycle D <0.25 for
2
(one layer, 70
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
SMD version
V
SMD version
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=55 A
DS
=V
=25 V, V
=25 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
|R
D
D
=1 mA
D
=60 µA
D
GS
GS
DS
DS(on)max
=55 A,
=55 A,
=0 V,
=0 V,
=0 V
5)
,
min.
1.2
25
43
-
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
5.1
3.2
1.1
10
10
85
-
-
-
-
IPB04N03LA G
max.
100
100
1.4
6.4
3.9
62
40
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2006-05-10