SI7108DN-T1-GE3 Vishay, SI7108DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7108DN-T1-GE3
• Description: MOSFET N-CH 20V 14A 1212-8
• Manufacturer: Vishay

Specifications of SI7108DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 6.1mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7108DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73216
S-80581-Rev. E, 17-Mar-08
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
10
0.2
= 22 A
10
= 10 V
V
V
GS
SD
T
Q
J
= 4.5 V
g
- Source-to-Drain Voltage (V)
= 150 °C
I
20
D
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
20
30
0.6
30
40
0.8
V
GS
T
= 10 V
J
40
= 25 °C
50
1.0
60
50
1.2
0.015
0.012
0.009
0.006
0.003
0.000
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
C
D
GS
rss
= 22 A
V
V
2
4
= 10 V
DS
GS
T
J
0
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
4
8
C
I
oss
D
C
= 22 A
50
iss
Vishay Siliconix
12
6
75
Si7108DN
www.vishay.com
100
16
8
125
150
10
20
3