SI7108DN-T1-GE3 Vishay, SI7108DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7108DN-T1-GE3
• Description: MOSFET N-CH 20V 14A 1212-8
• Manufacturer: Vishay

Specifications of SI7108DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 6.1mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7108DN-T1-GE3TR

Si7108DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Limited by
R
DS(on)
0.01
100
100
0.1
10
10
1
0.1
-2
*
Limited
* V
I
125
D(on)
GS
Single Pulse
T
> minimum V
A
150
V
= 25 °C
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
BV
GS
DSS
at which R
Limited
DS(on)
10
50
40
30
20
10
0
1
0.01
I
is specified
DM
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
Limited
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
t
A
1
= P
S-80581-Rev. E, 17-Mar-08
t
Document Number: 73216
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
100
600
600