SI7108DN-T1-GE3 Vishay, SI7108DN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7108DN-T1-GE3
• Description: MOSFET N-CH 20V 14A 1212-8
• Manufacturer: Vishay

Specifications of SI7108DN-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 6.1mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7108DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73216.
Document Number: 73216
S-80581-Rev. E, 17-Mar-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7108DN
www.vishay.com
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