IRF6617 International Rectifier, IRF6617 Datasheet - Page 3

• Manufacturer Part Number: IRF6617
• Description: MOSFET N-CH 30V 14A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6617

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6617; IRF6617TR

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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1000.0
100.0
1000
10000
10.0
100
Fig 3. Typical Transfer Characteristics
1000
0.1
1.0
0.1
10
100
1
Fig 1. Typical Output Characteristics
0.1
1.0
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
1
3.0
T J = 25°C
Ciss
Crss
Coss
V DS = 15V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
10
f = 1 MHZ
4.0
10
TOP
BOTTOM
5.0
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
6.0
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
2.0
1.5
1.0
0.5
1000
100
Fig 2. Typical Output Characteristics
12
10
10
1
-60 -40 -20
8
6
4
2
0
0.1
0
I D = 15A
V GS = 10V
I D = 12A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
5
Q G Total Gate Charge (nC)
0
2.5V
10
20
1
V DS = 24V
VDS= 15V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
15
60
80 100 120 140 160
10
20
TOP
BOTTOM
25
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
3
100
30