IRF6617 International Rectifier, IRF6617 Datasheet - Page 4

• Manufacturer Part Number: IRF6617
• Description: MOSFET N-CH 30V 14A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6617

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6617; IRF6617TR

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1000.0
4
100.0
10.0
60
50
40
30
20
10
1.0
0.1
0
25
0.2
0.001
0.01
100
0.1
10
1
1E-006
V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
50
0.4
T J = 150°C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.05
0.02
0.01
0.20
0.10
SINGLE PULSE
( THERMAL RESPONSE )
75
0.6
1E-005
T J = 25°C
100
0.8
0.0001
V GS = 0V
125
1.0
t 1 , Rectangular Pulse Duration (sec)
1.2
150
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
0.01
1
R
1
τ
2
R
τ
2
2
R
2
R
τ
3
3
R
τ
0.1
3
Fig 10. Threshold Voltage vs. Temperature
3
2.5
2.0
1.5
1.0
1000
100
0.1
10
τ
R
4
1
-75
τ
4
R
4
Fig 8. Maximum Safe Operating Area
4
0
Tc = 25°C
Tj = 150°C
Single Pulse
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
-50
5
5
R
τ
5
5
V DS , Drain-toSource Voltage (V)
τ
1
τ
C
τ
-25
Ri (°C/W)
T J , Temperature ( °C )
0.6676
1.0462
1.5611
29.282
25.455
1
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25
10
0.000066
0.000896
0.004386
0.68618
32
10
τi (sec)
50
I D = 250µA
75
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100µsec
10msec
1msec
100
100
100 125
1000
150