IPB60R190C6 Infineon Technologies, IPB60R190C6 Datasheet - Page 13

• Manufacturer Part Number: IPB60R190C6
• Description: MOSFET N-CH 600V 20.2A TO263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPB60R190C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20.2A
• Vgs(th) (max) @ Id: 3.5V @ 630µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 100V
• Power - Max: 151W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.17ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Packages: PG-TO263-3
• Vds (max): 600.0 V
• Package: D2PAK (TO-263)
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 59.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB60R190C6INTR

6
Table 20
Table 21
Table 22
Final Data Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode characteristics
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode characteristics
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
13
V
V
GS
DS
V
DS
600V CoolMOS™ C6 Power Transistor
10%
90%
I
D
t
d(on)
t
on
t
r
V
t
D
d(off)
t
off
Rev. 2.1, 2010-02-09
t
f
V
(BR)DS
IPx60R190C6
Test circuits
V
DS