IPB60R190C6 Infineon Technologies, IPB60R190C6 Datasheet - Page 7

• Manufacturer Part Number: IPB60R190C6
• Description: MOSFET N-CH 600V 20.2A TO263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPB60R190C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20.2A
• Vgs(th) (max) @ Id: 3.5V @ 630µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 100V
• Power - Max: 151W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.17ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Packages: PG-TO263-3
• Vds (max): 600.0 V
• Package: D2PAK (TO-263)
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 59.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB60R190C6INTR

Table 8
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Table 9
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Final Data Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
V
Symbol
V
t
Q
I
rr
rrm
plateau
SD
gs
gd
g
rr
Min.
-
-
-
-
Min.
-
-
-
-
7
Typ.
7.6
32
63
5.4
Typ.
0.9
430
6.9
30
Values
Values
600V CoolMOS™ C6 Power Transistor
Max.
-
-
-
-
Max.
-
-
-
-
Unit
nC
V
Unit
V
ns
µC
A
Electrical characteristics
Note /
Test Condition
V
V
Note /
Test Condition
V
T
V
d
(see table 22)
Rev. 2.1, 2010-02-09
i
j
DD
GS
GS
R
=25 °C
F
=400 V,
/d
=480 V,
=0 to 10 V
=0 V,
t
IPx60R190C6
=100 A/µs
I
F
I
=9.5A,
F
I
=9.5A,
D
=9.5A,