TJ120F06J3(TE24L,Q Toshiba, TJ120F06J3(TE24L,Q Datasheet

MOSFET P-CH 60V 120A TO-220SM

TJ120F06J3(TE24L,Q

Manufacturer Part Number
TJ120F06J3(TE24L,Q
Description
MOSFET P-CH 60V 120A TO-220SM
Manufacturer
Toshiba
Datasheet

Specifications of TJ120F06J3(TE24L,Q

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
258nC @ 10V
Input Capacitance (ciss) @ Vds
11640pF @ 10V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-220SM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TJ120F06J3(TE24LQTR
Chopper Regulator, DC-DC Converter Applications
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Thermal resistance, channel to case
Note 1: Please use devises on condition that the channel temperature is below 175°C.
Note 2: V
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
This transistor is an electrostatic sensitive device. Please handle with caution
AEC-Q101.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
= −25 V, T
Characteristics
GS
DC
Pulse
= 20 kΩ)
DSS
th
ch
(Note 1)
(Note 1)
(Note 2)
= −1.5 to −3.0 V (V
= 25°C (Initial), L = 57 μH, R
= −10 μA (max) (V
DS (ON)
(Ta = 25°C)
TJ120F06J3
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
| = 110 S (typ.)
AS
AR
stg
D
ch
D
= 5.5 mΩ (typ.)
R
DS
Symbol
th (ch-c)
DS
= −10 V, I
= −60 V)
−55 to 175
Rating
−120
−360
−120
−60
−60
±20
300
608
175
30
G
1
= 25 Ω, I
Max
0.5
D
= −1 mA)
AR
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
= −120 A
Weight: 1.07 g (typ.)
JEDEC
JEITA
TOSHIBA
2.54 ± 0.25
0.76 ± 0.1
1.4 ± 0.1
10.0 ± 0.3
9.5 ± 0.2
1 2 3
1
8.0
1.1
2.34 ± 0.25
2.35 ± 0.1
TJ120F06J3
2-10W1A
1. GATE
2. DRAIN
3. SOURSE
2009-04-17
(HEAT SINK)
0.4 ± 0.1
Unit: mm
2
3
0.4 ± 0.1

Related parts for TJ120F06J3(TE24L,Q

TJ120F06J3(TE24L,Q Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

... Note 6: A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain ...

Page 3

Moisture-Proof Packing The TJ120F06J3 is packed in a moisture-proof laminated aluminum bag. Precautions for Transportation and Storage (1) Avoid excessive vibration during transportation. (2) Do not toss or drop the packed devices to avoid ripping of the bag. (3) After ...

Page 4

I – −200 −6 Common source − 25°C −10 Pulse Test −160 −15 −120 − −3.5 V −40 0 −0.4 −0.8 −1.2 −1.6 0 Drain-source voltage V DS (V) I – V ...

Page 5

(ON) 20 Common source Pulse Test −30, −60, −120 − −80 − 120 Case temperature Tc (°C) Capacitance – V ...

Page 6

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 μ 100 μ SAFE OPERATING AREA -1000 I D max (pulse) * 100 μ max (continuous -100 DC OPEATION Tc = 25°C ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords