TJ120F06J3(TE24L,Q Toshiba, TJ120F06J3(TE24L,Q Datasheet - Page 2

• Manufacturer Part Number: TJ120F06J3(TE24L,Q
• Description: MOSFET P-CH 60V 120A TO-220SM
• Manufacturer: Toshiba

Specifications of TJ120F06J3(TE24L,Q

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 11640pF @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-220SM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TJ120F06J3(TE24LQTR

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
3
J120F06J
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Note 6
Part No.
(or abbreviation code)
Lot No.
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
⎪Y
I
C
I
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
t
t
iss
rss
gs
gd
th
fs
r
f
g
Symbol
⎪
V
I
I
DRP
Q
DR
DSF
t
Note 6: A line under a Lot No. identifies the indication of product Labels
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
rr
rr
V
V
I
I
V
V
V
V
V
D
D
GS
DS
DS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
V
Duty ≤ 1%, t
GS
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
= ± 16 V, V
= −60 V, V
= −10 V, I
= −10 V, I
= −10 V, I
= −10V, V
≈ −48 V, V
I
I
dI
DR
DR
DR
−10 V
2
= −120 A, V
= −120 A, V
(Ta = 25°C)
/dt = 50 A/μs
0 V
Test Condition
D
D
D
GS
GS
GS
GS
GS
Test Condition
DS
= −1 mA
= −60 A
= −60A
w
= 0 V, f = 1 MHz
= 0 V
= 20 V
= 0 V
= −10 V, I
= 0 V
= 10 μs
GS
GS
⎯
⎯
I
V
D
= 0 V
= 0 V,
DD
=−60 A
D
≈ −30V
= −120 A
V
OUT
−1.5
Min
−60
−35
Min
55
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
11640
1060
1520
Typ.
110
123
330
258
170
5.5
Typ.
21
38
88
⎯
⎯
⎯
⎯
⎯
65
52
⎯
⎯
⎯
TJ120F06J3
2009-04-17
Max
−3.0
±10
−10
8.0
−120
−360
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
1.5
⎯
⎯
Unit
mΩ
μA
μA
pF
nC
ns
Unit
V
V
V
S
nC
ns
A
A
V