IXTP3N50P IXYS, IXTP3N50P Datasheet - Page 2

• Manufacturer Part Number: IXTP3N50P
• Description: MOSFET N-CH 500V 3.6A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP3N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 409pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 3.6
• Rds(on), Max, Tj=25°c, (?): 2
• Ciss, Typ, (pf): 409
• Qg, Typ, (nc): 9.3
• Trr, Typ, (ns): 400
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.8
• Package Style: TO-220
• For Use With: EVLB002 - KIT EVAL NONDIM LIGHT BALLASTEVLB001 - KIT EVAL DIMMABLE LIGHT BALLAST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
S
SM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
fs
SD
one or moreof the following U.S. patents:
iss
oss
rss
g(on)
gs
gd
thJC
thCS
Dim.
A1
A2
D1
E1
b1
b2
c1
e1
L1
L2
L3
TO-252 AA (IXTY) Outline
A
b
D
E
e
H
L
c
Millimeter
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
9.40 10.42
0.51
0.64
0.89
2.54
Min. Max.
2.28 BSC
4.57 BSC
0
Test Conditions
V
V
V
R
V
(TO-220)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
1.02
1.02
1.27
2.92
DS
GS
GS
GS
GS
R
G
= I
= 3 A, -di/dt = 100 A/µs
= 100 V, V
= 10 V; I
= 20 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
Inches
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
GS
0
= 0 V,
D
DS
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, pulse test
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= I
(T
(T
D25
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
2.5
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Typ.
Typ.
0.25
409
400
3.5
6.1
9.3
3.3
3.4
48
15
15
38
12
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
1.8° C/W
1.5
3
5
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXTA 3N50P IXTP 3N50P
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
3 - Source
6,771,478 B2
6,727,585
6,759,692
IXTY 3N50P
2 - Drain
4 - Drain