IXTP3N50P IXYS, IXTP3N50P Datasheet - Page 4

• Manufacturer Part Number: IXTP3N50P
• Description: MOSFET N-CH 500V 3.6A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP3N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 409pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 3.6
• Rds(on), Max, Tj=25°c, (?): 2
• Ciss, Typ, (pf): 409
• Qg, Typ, (nc): 9.3
• Trr, Typ, (ns): 400
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.8
• Package Style: TO-220
• For Use With: EVLB002 - KIT EVAL NONDIM LIGHT BALLASTEVLB001 - KIT EVAL DIMMABLE LIGHT BALLAST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
10
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1
0.5
4.5
0
0.55
f = 1MH z
5
5
Fig. 9. Sou r ce Cu r r e nt vs .
T
Sour ce -To-Dr ain V oltage
0.6
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
J
= 125
10
T
J
0.65
= 125
5.5
º
V
-40
V
25
C
15
V
S D
G S
º
º
º
0.7 0.75
D S
C
C
C
- V olts
- V olts
20
- V olts
6
25
0.8
6.5
C os s
C rs
T
C is s
0.85
J
30
= 25
º
0.9
35
C
7
0.95
40
0.1
10
10
8
7
6
5
4
3
2
1
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
J
T
T
D S(on)
V
I
I
J
C
= -40
D
G
1
125
D S
= 150ºC
= 1.5A
= 10m A
= 25ºC
25
Fig. 8. Trans conductance
IXTA 3N50P IXTP 3N50P
1
º
º
= 250V
º
C
C
2
Lim it
C
Fig. 10. Gate Char ge
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
Q
3
2
G
I
- nanoCoulombs
D
V
4
- Amperes
D S
D C
100
- V olts
3
5
6
IXTY 3N50P
4
7
8
5
100µs
1m s
10m s
25µs
9
1000
10
6