IXTP3N50P IXYS, IXTP3N50P Datasheet - Page 3

• Manufacturer Part Number: IXTP3N50P
• Description: MOSFET N-CH 500V 3.6A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP3N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 409pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 3.6
• Rds(on), Max, Tj=25°c, (?): 2
• Ciss, Typ, (pf): 409
• Qg, Typ, (nc): 9.3
• Trr, Typ, (ns): 400
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.8
• Package Style: TO-220
• For Use With: EVLB002 - KIT EVAL NONDIM LIGHT BALLASTEVLB001 - KIT EVAL DIMMABLE LIGHT BALLAST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
3.2
2.8
2.4
2.0
1.6
1.2
0.8
3
0
3
0
0
0
0
V
GS
1
Fig. 3. Output Char acte r is tics
Fig. 5. R
Fig. 1. Output Char acte r is tics
= 10V
1
2
0.5 I
2
D S(on)
4
2
V
D 25
I
D S
3
D
V
V
V
@ 125
GS
- A mperes
D S
V alue vs . I
GS
@ 25
- V olts
Nor m aliz e d to
= 10V
- V olts
= 10V
3
6
4
8V
7V
8V
7V
º
º
C
C
5
6V
4
8
T
6V
5V
D
J
T
= 125
J
6
= 25
10
5
º
º
C
C
7
12
8
6
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
-50
-50
Fig. 2. Exte nde d Output Char acte r is tics
0
Fig. 4. R
V alue vs . Junction Te m pe r atur e
V
3
-25
-25
GS
Fig. 6. Dr ain Curr e nt vs . Cas e
IXTA 3N50P IXTP 3N50P
= 10V
6
T
D S(on
0
T
0
C
J
9
- Degrees Centigrade
- Degrees Centigrade
V
Te m pe r ature
)
25
25
GS
Nor m aliz e d to 0.5 I
12
V
@ 25
D S
= 10V
I
D
8V
15
= 3A
50
50
- V olts
º
C
7V
6V
18
75
75
IXTY 3N50P
21
I
D
100
100
= 1.5A
24
D 25
125
125
27
150
150
30