STP4NK50ZD STMicroelectronics, STP4NK50ZD Datasheet - Page 3

• Manufacturer Part Number: STP4NK50ZD
• Description: MOSFET N-CH 500V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5131-5

STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
V
Symbol
Symbol
R
dv/dt
ESD(G-D)
I
Symbol
V
P
V
R
DM
V
V
thj-case
SD
T
DGR
TOT
T
I
I
ISO
E
DS
GS
stg
thj-a
T
I
D
D
J
AR
(2)
AS
≤3A, di/dt ≤200A/µs, V
l
(3)
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal resistance
Avalanche data
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
Parameter
=80%V
Parameter
Parameter
C
GS
= 25°C
GS
(BR)DSS
= 20KΩ)
= 0)
C
C
=100°C
= 25°C
TO-220 IPAK/DPAK TO-220FP
TO-220 IPAK/DPAK TO-220FP
62.5
1.9
12
--
3
0.36
2.78
45
-55 to 150
1.9
12
3
100
Value
Value
2800
--
± 30
500
500
300
(1)
Value
15
(1)
(1)
120
3
Electrical ratings
1.9
12
2500
0.16
6.25
3
62.5
20
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
A
V
V
V
V
A
A
A
V
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