STP4NK50ZD STMicroelectronics, STP4NK50ZD Datasheet - Page 7

• Manufacturer Part Number: STP4NK50ZD
• Description: MOSFET N-CH 500V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5131-5

STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Figure 7.
Figure 9.
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
Output characterisics
Transconductance
Figure 8.
Figure 10. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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