STP4NK50ZD STMicroelectronics, STP4NK50ZD Datasheet - Page 9

• Manufacturer Part Number: STP4NK50ZD
• Description: MOSFET N-CH 500V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5131-5

STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
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Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
circuit
Test circuit
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