IXTA80N10T IXYS, IXTA80N10T Datasheet - Page 2

• Manufacturer Part Number: IXTA80N10T
• Description: MOSFET N-CH 100V 80A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA80N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3040pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.014
• Ciss, Typ, (pf): 3040
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 230
• Rthjc, Max, (k/w): 0.65
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. On through-kole packages R
must be 5 mm or less from the package body.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25A, V
= 25A, -di/dt = 100A/μs
= 50V, V
= 10V, I
= 0V, V
= 10V, V
= 15Ω (External)
= 10V, V
= 0V
GS
D
DS
GS
DS
DS
= 0.5 • I
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
DS(on)
, I
, I
D
D
Kelvin test contact location
= 10A
= 25A
5,049,961
5,063,307
5,187,117
JM
Characteristic Values
Min.
33
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Typ.
3040
100
0.50
6,162,665
6,259,123 B1
6,306,728 B1
420
Typ.
31
54
40
90
48
60
21
15
55
0.65
Max.
Max.
220
80
1.1
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins:
6,727,585
6,771,478 B2 7,071,537
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
1 - Gate
3 - Source
14.61
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Min.
Millimeter
0
7,005,734 B2
7,063,975 B2
IXTA80N10T
IXTP80N10T
10.41
15.88
Max.
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
BSC
2.79
1.40
1.78
0.13
1. Gate
2. Drain
3. Source
2 - Drain
4 - Drain
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
7,157,338B2
Inches
0
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.005