IXTA80N10T IXYS, IXTA80N10T Datasheet - Page 3

• Manufacturer Part Number: IXTA80N10T
• Description: MOSFET N-CH 100V 80A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA80N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3040pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.014
• Ciss, Typ, (pf): 3040
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 230
• Rthjc, Max, (k/w): 0.65
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
4.6
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.0
0.0
0
0.1
0.2
V
25
GS
Fig. 5. R
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
= 10V
0.2
0.4
15V - - - -
50
0.3
0.6
DS(on)
75
0.4
0.8
vs. Drain Current
Normalized to I
100
I
D
V
0.5
1.0
V
DS
- Amperes
DS
- Volts
- Volts
125
0.6
1.2
V
GS
= 10V
0.7
1.4
V
150
GS
9V
8V
7V
6V
= 10V
D
0.8
1.6
9V
8V
7V
6V
5V
= 40A Value
175
J
J
0.9
1.8
= 150ºC
T
= 25ºC
J
T
200
= 175ºC
J
= 25ºC
1.0
2.0
225
1.1
2.2
250
1.2
2.4
280
240
200
160
120
2.8
2.4
2.0
1.6
1.2
0.8
0.4
80
40
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
2
-25
-25
Fig. 4. R
= 10V
Fig. 6. Drain Current vs. Case Temperature
4
0
0
DS(on)
6
T
T
Junction Temperature
C
25
J
25
- Degrees Centigrade
- Degrees Centigrade
Normalized to I
V
GS
8
V
= 10V
DS
50
50
- Volts
9V
7V
6V
8V
10
75
75
I
D
= 80A
12
D
= 40A Value vs.
100
100
IXTA80N10T
IXTP80N10T
I
D
14
= 40A
125
125
16
J
= 25ºC
150
150
18
175
175
20