IXTA80N10T IXYS, IXTA80N10T Datasheet - Page 5

• Manufacturer Part Number: IXTA80N10T
• Description: MOSFET N-CH 100V 80A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA80N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3040pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.014
• Ciss, Typ, (pf): 3040
• Qg, Typ, (nc): 60
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 230
• Rthjc, Max, (k/w): 0.65
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
280
240
200
160
120
50
48
46
44
42
40
38
70
65
60
55
50
45
40
35
80
40
0
10
25
15
t
T
V
12
r
J
DS
35
= 125ºC, V
20
= 50V
I
Switching Times vs. Gate Resistance
D
Switching Times vs. Drain Current
14
= 10A
Rise Time vs. Junction Temperature
45
t
I
d(on)
25
D
Fig. 17. Resistive Turn-off
GS
Fig. 15. Resistive Turn-on
= 30A
16
= 10V
- - - -
Fig. 13. Resistive Turn-on
55
T
I
30
D
18
J
R
- Amperes
- Degrees Centigrade
G
65
I
D
- Ohms
= 30A
20
35
I
75
D
t
R
V
= 10A
f
G
DS
22
= 15Ω, V
= 50V
40
85
24
t
d(off)
GS
R
V
T
45
95
T
DS
J
G
= 10V
- - - -
J
= 125ºC
= 15Ω , V
26
= 25ºC
= 50V
105
50
28
GS
= 10V
115
30
55
78
70
62
54
46
38
30
95
85
75
65
55
45
35
25
125
160
140
120
100
49
48
47
46
45
44
43
42
41
40
39
80
60
40
80
75
70
65
60
55
50
45
40
35
25
15
10
t
R
V
t
T
V
f
G
DS
R
V
f
J
DS
35
DS
G
= 15Ω, V
= 125ºC, V
12
Switching Times vs. Junction Temperature
= 50V
20
= 15Ω , V
= 50V
= 50V
Switching Times vs. Gate Resistance
I
D
45
t
= 30A
d(off)
14
GS
t
25
d(off)
GS
I
GS
Fig. 18. Resistive Turn-off
D
- - - -
= 10V
Fig. 16. Resistive Turn-off
= 10V
= 10A
= 10V
55
T
I
- - - -
Rise Time vs. Drain Current
J
D
Fig. 14. Resistive Turn-on
16
- Degrees Centigrade
= 30A
30
R
65
G
I
D
18
- Ohms
- Amperes
35
75
20
85
40
22
I
T
T
95
D
J
J
= 25ºC
= 125ºC
= 10A
45
IXTA80N10T
IXTP80N10T
24
105
50
26
IXYS REF: T_80N10T(3V)12-11-07-A
115
28
55
125
270
230
190
150
110
70
30
76
72
68
64
60
56
52
48
44
40
36
30