STW10NK80Z STMicroelectronics, STW10NK80Z Datasheet - Page 3

• Manufacturer Part Number: STW10NK80Z
• Description: MOSFET N-CH 800V 9A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW10NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Forward Transconductance Gfs (max / Min): 9.6 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3254-5

STP10NK80ZFP - STP10NK80Z - STW10NK80Z
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
Symbol
Symbol
R
Symbol
dv/dt
I
V
SD
P
V
R
DM
V
thj-case
V
T
E
DGR
T
I
I
TOT
I
ISO
GS
thj-a
T
DS
stg
D
D
AS
AS
≤ 9A, di/dt ≤ 200A/µs,V
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
≤ V
(BR)DSS
Parameter
Parameter
C
GS
, T
= 25°C
Parameter
GS
= 20KΩ)
j
≤ T
= 0)
JMAX
C
C
=100°C
= 25°C
TO-220 TO-220FP
TO-220/ TO-247
0.78
1.28
62.5
160
36
--
9
6
-55 to 150
Value
Value
3.1
± 30
800
800
300
4.5
4
Value
290
Electrical ratings
9
TO-220FP
TO-247
2500
36
0.32
9
6
40
0.78
(1)
(1)
50
(1)
W/°C
V/ns
Unit
°C/W
°C/W
Unit
Unit
KV
°C
mJ
W
V
°C
V
V
V
A
A
A
A
3/15