STW10NK80Z STMicroelectronics, STW10NK80Z Datasheet - Page 4

• Manufacturer Part Number: STW10NK80Z
• Description: MOSFET N-CH 800V 9A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW10NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Forward Transconductance Gfs (max / Min): 9.6 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3254-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
V
(see Figure 19)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 1mA, V
=0, V
=640V, I
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
= V
= 10V, I
=15V, I
=25V, f=1 MHz, V
=10V
Test condictions
= Max rating,
= Max rating @125°C
= ±20V
Test condictions
GS
DS
, I
D
D
GS
D
=0V to 640V
D
= 4.5A
= 4.5A
= 100µA
= 9A
= 0
GS
=0
Min.
800
3
Min. Typ. Max.
Typ.
3.75
0.78
2180
12.5
205
105
9.6
38
72
37
oss
Max.
±
4.5
0.9
when V
50
10
1
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S