STW43NM60ND STMicroelectronics, STW43NM60ND Datasheet - Page 7

• Manufacturer Part Number: STW43NM60ND
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW43NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.075ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 35 A
• Power Dissipation: 255 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8461-5

STW43NM60ND
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
0.8
(V)
0.9
1.0
0.7
0.6
0.5
0.4
SD
0.8
1.0
0.7
1.1
0.9
0
-50
-50°C
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
5
-25
10
0
15
25
20
50
25
75 100 125
T
J
30
=150°C
25°C
35
Doc ID 14402 Rev 4
I
SD
AM01515v1
AM01517v1
T
J
(A)
(°C)
Figure 11. Normalized on resistance vs
Figure 13. Normalized B
(norm)
R
BV
DS(on)
0.93
(DSS)
1.05
0.97
1.01
1.9
1.5
2.1
1.3
0.5
1.7
1.1
0.9
0.7
(V)
-50
-50
Capacitance variations
temperature
-25
-25
0
0
25
25
Electrical characteristics
VDSS
50
50
75 100 125
75 100 125
vs temperature
AM01516v1
AM01518v1
T
T
J
J
(°C)
(°C)
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