FDD6796A Fairchild Semiconductor, FDD6796A Datasheet

MOSFET N-CH 25V 20A DPAK

FDD6796A

Manufacturer Part Number
FDD6796A
Description
MOSFET N-CH 25V 20A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6796A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1780pF @ 13V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6796ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6796A
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD6796A / FDU6796A_F071
N-Channel PowerTrench
25 V, 5.7 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDD6796A
FDU6796A
DS(on)
DS(on)
= 5.7 mΩ at V
= 15.0 mΩ at V
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
D-PAK
(TO-252)
FDU6796A_F071
GS
GS
= 10 V, I
FDD6796A
-Continuous
-Continuous (Silicon limited)
-Pulsed
= 4.5 V, I
Device
D
D
= 20 A
= 15.2 A
T
D
®
C
= 25 °C unless otherwise noted
MOSFET
Parameter
G
D
D-PAK (TO-252)
S
TO-251AA
Package
1
Short-Lead I-PAK
(TO-251AA)
T
T
T
T
T
C
C
C
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.
Applications
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
N/A(Tube)
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
G
Tape Width
12 mm
N/A
-55 to +175
Ratings
±20
150
3.7
3.6
25
40
67
20
40
42
40
S
D
DS(on)
www.fairchildsemi.com
2500 units
March 2009
Quantity
75 units
and fast
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDD6796A

FDD6796A Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device FDD6796A FDD6796A FDU6796A FDU6796A_F071 ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency of DC/DC converters using either = 15.2 A synchronous or conventional switching PWM controllers. It has ...

Page 2

... R is determined by the user’s board design. θJC θJA 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° based on starting mH ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev. °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ...

Page 3

... Junction Temperature 150 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 120 175 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev. °C unless otherwise noted 4 3 µ 1.5 2.0 2.5 Figure 100 125 150 175 Figure 4. ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE MAX RATED 3.6 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev. °C unless otherwise noted J 5000 1000 100 125 100 ...

Page 5

... Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 14. ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev. °C unless otherwise noted 3.6 C/W θ RECTANGULAR PULSE DURATION (sec) SINGLE PULSE C/W θ JA ...

Page 6

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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